NIMS Unveils Revolutionary N-Channel Diamond Transistor for Extreme Conditions

NIMS Unveils Revolutionary N-Channel Diamond Transistor for Extreme Conditions

Energy Daily

Published

Tokyo, Japan (SPX) Mar 22, 2024

Researchers at the National Institute for Materials Science (NIMS) have successfully developed the world's first n-channel diamond metal-oxide-semiconductor field-effect transistor (MOSFET), marking a major advancement in semiconductor technology. This innovation opens the door to creating diamond-based complementary metal-oxide-semiconductor (CMOS) integrated circuits, particularly beneficial f

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